Induced structural damages by He+ irradiation in conducting transparent indium-tin oxide thin films
Identifieur interne : 000814 ( France/Analysis ); précédent : 000813; suivant : 000815Induced structural damages by He+ irradiation in conducting transparent indium-tin oxide thin films
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Abstract
Irradiation of polycrystalline sputter-deposited ITO thin films on float-glass substrates was performed with high-energy MeV He+ ion beam implantation at doses in the range 2-6 × 10+15 ions/cm2. A significant change in both surface morphology and crystallographic structure after implantation was observed. It results in a crystallographic disorder of large crystallites with the ion dose, creation of electronic defects and a roughening of the ITO thin-films' surface.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Induced structural damages by He<sup>+</sup> irradiation in conducting transparent indium-tin oxide thin films</title><author><name sortKey="Maaza, M" uniqKey="Maaza M">M. Maaza</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Nanosciences Laboratories, Materials Research Group, iThemba LABS, P.O. Box 722, Somerset West 7129</s1><s2>Faure</s2><s3>ZAF</s3><sZ>1 aut.</sZ></inist:fA14><country>Afrique du Sud</country><wicri:noRegion>Faure</wicri:noRegion></affiliation></author><author><name sortKey="Nemraoui, O" uniqKey="Nemraoui O">O. Nemraoui</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Physics Department, Rand Afrikaans University Auckland Park, PO Box 392</s1><s2>Johannesburg</s2><s3>ZAF</s3><sZ>2 aut.</sZ></inist:fA14><country>Afrique du Sud</country><wicri:noRegion>Johannesburg</wicri:noRegion></affiliation></author><author><name sortKey="Beye, A C" uniqKey="Beye A">A. C. Beye</name><affiliation wicri:level="4"><inist:fA14 i1="03"><s1>Princeton Materials Institute, Princeton University</s1><s2>Princeton, NJ 08544</s2><s3>USA</s3><sZ>3 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><settlement type="city">Princeton (New Jersey)</settlement><region type="state">New Jersey</region></placeName><orgName type="university">Université de Princeton</orgName></affiliation></author><author><name sortKey="Sella, C" uniqKey="Sella C">C. Sella</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Laboratoire d'Optique des Solides, Universite Pierre-Marie Curies, Paris VI</s1><s2>Paris 0005</s2><s3>FRA</s3><sZ>4 aut.</sZ></inist:fA14><country>France</country><wicri:noRegion>Paris 0005</wicri:noRegion><placeName><settlement type="city">Paris</settlement><region type="région" nuts="2">Île-de-France</region></placeName></affiliation></author><author><name sortKey="Derry, T" uniqKey="Derry T">T. Derry</name><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Schonland Nuclear Centre, iThemba LABS</s1><s2>Wits 3050</s2><s3>ZAF</s3><sZ>5 aut.</sZ></inist:fA14><country>Afrique du Sud</country><wicri:noRegion>Wits 3050</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">06-0032223</idno><date when="2006">2006</date><idno type="stanalyst">PASCAL 06-0032223 INIST</idno><idno type="RBID">Pascal:06-0032223</idno><idno type="wicri:Area/Main/Corpus">009814</idno><idno type="wicri:Area/Main/Repository">008A06</idno><idno type="wicri:Area/France/Extraction">000814</idno></publicationStmt><seriesStmt><idno type="ISSN">0927-0248</idno><title level="j" type="abbreviated">Sol. energy mater. sol. cells</title><title level="j" type="main">Solar energy materials and solar cells</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Indium oxide</term><term>Ion beam</term><term>Polycrystal</term><term>Radiation damage</term><term>Surface structure</term><term>Thin film</term><term>Tin oxide</term><term>Transparent thin film</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Détérioration par rayonnement</term><term>Couche mince transparente</term><term>Indium oxyde</term><term>Etain oxyde</term><term>Polycristal</term><term>Couche mince</term><term>Faisceau ionique</term><term>Structure surface</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Irradiation of polycrystalline sputter-deposited ITO thin films on float-glass substrates was performed with high-energy MeV He<sup>+</sup> ion beam implantation at doses in the range 2-6 × 10<sup>+1</sup>5 ions/cm<sup>2</sup>. A significant change in both surface morphology and crystallographic structure after implantation was observed. It results in a crystallographic disorder of large crystallites with the ion dose, creation of electronic defects and a roughening of the ITO thin-films' surface.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0927-0248</s0></fA01><fA03 i2="1"><s0>Sol. energy mater. sol. cells</s0></fA03><fA05><s2>90</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Induced structural damages by He<sup>+</sup> irradiation in conducting transparent indium-tin oxide thin films</s1></fA08><fA11 i1="01" i2="1"><s1>MAAZA (M.)</s1></fA11><fA11 i1="02" i2="1"><s1>NEMRAOUI (O.)</s1></fA11><fA11 i1="03" i2="1"><s1>BEYE (A. C.)</s1></fA11><fA11 i1="04" i2="1"><s1>SELLA (C.)</s1></fA11><fA11 i1="05" i2="1"><s1>DERRY (T.)</s1></fA11><fA14 i1="01"><s1>Nanosciences Laboratories, Materials Research Group, iThemba LABS, P.O. Box 722, Somerset West 7129</s1><s2>Faure</s2><s3>ZAF</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Physics Department, Rand Afrikaans University Auckland Park, PO Box 392</s1><s2>Johannesburg</s2><s3>ZAF</s3><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>Princeton Materials Institute, Princeton University</s1><s2>Princeton, NJ 08544</s2><s3>USA</s3><sZ>3 aut.</sZ></fA14><fA14 i1="04"><s1>Laboratoire d'Optique des Solides, Universite Pierre-Marie Curies, Paris VI</s1><s2>Paris 0005</s2><s3>FRA</s3><sZ>4 aut.</sZ></fA14><fA14 i1="05"><s1>Schonland Nuclear Centre, iThemba LABS</s1><s2>Wits 3050</s2><s3>ZAF</s3><sZ>5 aut.</sZ></fA14><fA20><s1>111-119</s1></fA20><fA21><s1>2006</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>18016</s2><s5>354000135247650110</s5></fA43><fA44><s0>0000</s0><s1>© 2006 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>11 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>06-0032223</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Solar energy materials and solar cells</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Irradiation of polycrystalline sputter-deposited ITO thin films on float-glass substrates was performed with high-energy MeV He<sup>+</sup> ion beam implantation at doses in the range 2-6 × 10<sup>+1</sup>5 ions/cm<sup>2</sup>. A significant change in both surface morphology and crystallographic structure after implantation was observed. It results in a crystallographic disorder of large crystallites with the ion dose, creation of electronic defects and a roughening of the ITO thin-films' surface.</s0></fC01><fC02 i1="01" i2="X"><s0>001D06C02F</s0></fC02><fC02 i1="02" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Détérioration par rayonnement</s0><s5>05</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Radiation damage</s0><s5>05</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Deteriorización por irradiación</s0><s5>05</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Couche mince transparente</s0><s5>06</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Transparent thin film</s0><s5>06</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Película transparente</s0><s5>06</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Indium oxyde</s0><s5>07</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Indium oxide</s0><s5>07</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Indio óxido</s0><s5>07</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Etain oxyde</s0><s5>08</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Tin oxide</s0><s5>08</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Estaño óxido</s0><s5>08</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Polycristal</s0><s5>09</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Polycrystal</s0><s5>09</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Policristal</s0><s5>09</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Couche mince</s0><s5>10</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Thin film</s0><s5>10</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Capa fina</s0><s5>10</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Faisceau ionique</s0><s5>12</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Ion beam</s0><s5>12</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Haz iónico</s0><s5>12</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Structure surface</s0><s5>13</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Surface structure</s0><s5>13</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Estructura superficie</s0><s5>13</s5></fC03><fN21><s1>009</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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